DocumentCode
890058
Title
Spatial distribution of excess carriers in electron-beam excited semiconductors
Author
Wittry, D.B.
Volume
55
Issue
5
fYear
1967
fDate
5/1/1967 12:00:00 AM
Firstpage
733
Lastpage
734
Abstract
The steady-state one-dimensional carrier distribution in depth is computed for electron-beam excitation of semiconductors, including diffusion and surface recombination. An exmple is given for n-type GaAs bombarded by a 29-kV electron beam.
Keywords
Charge carrier density; Charge carrier processes; Electron beams; Equations; Gallium arsenide; Laser excitation; Radiative recombination; Spontaneous emission; Steady-state; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5675
Filename
1447605
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