Modeling of an inversion base bipolar transistor

Author

Meyyappan, M. ; Grubin, H.L.

Author_Institution

Sci. Res. Associates Inc., Glastonbury, CT, USA

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

1037

Lastpage

89002

Abstract

Several two-dimensional numerical simulations performed to study the operational characteristics of a GaAs inversion base bipolar transistor (IBT) are discussed. The simulations show that at low base voltages the IBT operates like a junction field-effect transistor, which is characterized by a large depletion region near the base contact. At high base bias levels, there is a significant amount of hole injection into the active channel region, and the device begins to operate in the bipolar mode. The highest computed f_T is 21 GHz at a collector current density of 1.3×10⁴ A/cm²

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; 21 GHz; AlAs-GaAs; active channel region; collector current density; high base bias levels; hole injection; inversion base bipolar transistor; large depletion region; low base voltages; model; operational characteristics; two-dimensional numerical simulations; Bipolar transistors; Charge carrier processes; Current density; FETs; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Numerical simulation; Poisson equations; Technological innovation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21169

Filename

21169