• DocumentCode
    890299
  • Title

    RAPS-a rapid thermal processor simulation program

  • Author

    Shieh, Tsay-Jiu ; Carter, Ronald L.

  • Author_Institution
    Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA
  • Volume
    36
  • Issue
    1
  • fYear
    1989
  • fDate
    1/1/1989 12:00:00 AM
  • Firstpage
    19
  • Lastpage
    24
  • Abstract
    Rapid thermal processors using incoherent light illumination have become an important semiconductor processing tool for implantation anneal, oxidation, and alloying. The application in ohmic contact alloying, however, has to be made very cautiously, for the thin metal layer drastically changes the optical characteristics and thus the thermal response of the contact region. A rapid thermal processor simulation (RAPS) program has been developed to study the difference in temperature response during rapid thermal annealing for various substrate materials and the effect of thin metal coating the substrates with films. The results are correlated with experimental observations. The results suggest that users of commercial rapid thermal processors should be cautious about the temperature-sensor setup, the application area, and the interpretation of the measured temperature
  • Keywords
    electronic engineering computing; incoherent light annealing; ohmic contacts; semiconductor technology; thermal analysis; RAPS; alloying; implantation anneal; incoherent light illumination; ohmic contact alloying; oxidation; rapid thermal processor simulation program; semiconductor processing; substrate materials; thermal response; thin metal coating; Alloying; Lighting; Ohmic contacts; Optical films; Oxidation; Rapid thermal annealing; Rapid thermal processing; Simulated annealing; Substrates; Temperature measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.21172
  • Filename
    21172