DocumentCode :
890299
Title :
RAPS-a rapid thermal processor simulation program
Author :
Shieh, Tsay-Jiu ; Carter, Ronald L.
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA
Volume :
36
Issue :
1
fYear :
1989
fDate :
1/1/1989 12:00:00 AM
Firstpage :
19
Lastpage :
24
Abstract :
Rapid thermal processors using incoherent light illumination have become an important semiconductor processing tool for implantation anneal, oxidation, and alloying. The application in ohmic contact alloying, however, has to be made very cautiously, for the thin metal layer drastically changes the optical characteristics and thus the thermal response of the contact region. A rapid thermal processor simulation (RAPS) program has been developed to study the difference in temperature response during rapid thermal annealing for various substrate materials and the effect of thin metal coating the substrates with films. The results are correlated with experimental observations. The results suggest that users of commercial rapid thermal processors should be cautious about the temperature-sensor setup, the application area, and the interpretation of the measured temperature
Keywords :
electronic engineering computing; incoherent light annealing; ohmic contacts; semiconductor technology; thermal analysis; RAPS; alloying; implantation anneal; incoherent light illumination; ohmic contact alloying; oxidation; rapid thermal processor simulation program; semiconductor processing; substrate materials; thermal response; thin metal coating; Alloying; Lighting; Ohmic contacts; Optical films; Oxidation; Rapid thermal annealing; Rapid thermal processing; Simulated annealing; Substrates; Temperature measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.21172
Filename :
21172
Link To Document :
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