1/2-in 768(H)×492(V) pixel CCD image sensor

Author

Oda, Eiji ; Orihara, Kozo ; Tanaka, Takanori ; Kamata, Takao ; Ishihara, Yasuo

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

46

Lastpage

53

Abstract

A sensor with unit cell dimensions as small as 8.4(H)×9.8(V) μ has been developed. In order to realize such a high-density device, the following technologies have been developed: (1) dual-channel horizontal CCD registers, (2) single p-well vertical overflow drain, (3) high-capacitance p-well structure, and (4) inverted-LOCOS channel isolation process. A horizontal resolution of more than 500 TV lines has been obtained. Maximum signal charge for the vertical CCD register is as much as 1.5×10⁵ electrons, corresponding to 270-nA output current, in spite of a narrow-channel vertical CCD register with a mask width of only 1.8 μm. The total random noise is less than 20 electrons after correlated double sampling. The dynamic range reaches 77 dB, and the photosensitivity is 0.092 μA/μW. Experimental results also show that the technologies used here are effective for realizing a high-definition CCD image sensor for future use

Keywords

CCD image sensors; 1.8 micron; 270 nA; 377856 pixel; 492 pixel; 768 pixel; CCD image sensor; correlated double sampling; dual-channel horizontal CCD registers; dynamic range; high-capacitance p-well structure; high-density device; horizontal resolution; inverted-LOCOS channel isolation; mask width; maximum signal charge; output current; photosensitivity; single p-well vertical overflow drain; total random noise; unit cell dimensions; vertical CCD register; Charge coupled devices; Charge-coupled image sensors; Dynamic range; Electrons; Fabrication; Image resolution; Image sensors; Pixel; Radiofrequency interference; Solid state circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21176

Filename

21176