Title :
1/2-in 768(H)×492(V) pixel CCD image sensor
Author :
Oda, Eiji ; Orihara, Kozo ; Tanaka, Takanori ; Kamata, Takao ; Ishihara, Yasuo
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
1/1/1989 12:00:00 AM
Abstract :
A sensor with unit cell dimensions as small as 8.4(H)×9.8(V) μ has been developed. In order to realize such a high-density device, the following technologies have been developed: (1) dual-channel horizontal CCD registers, (2) single p-well vertical overflow drain, (3) high-capacitance p-well structure, and (4) inverted-LOCOS channel isolation process. A horizontal resolution of more than 500 TV lines has been obtained. Maximum signal charge for the vertical CCD register is as much as 1.5×105 electrons, corresponding to 270-nA output current, in spite of a narrow-channel vertical CCD register with a mask width of only 1.8 μm. The total random noise is less than 20 electrons after correlated double sampling. The dynamic range reaches 77 dB, and the photosensitivity is 0.092 μA/μW. Experimental results also show that the technologies used here are effective for realizing a high-definition CCD image sensor for future use
Keywords :
CCD image sensors; 1.8 micron; 270 nA; 377856 pixel; 492 pixel; 768 pixel; CCD image sensor; correlated double sampling; dual-channel horizontal CCD registers; dynamic range; high-capacitance p-well structure; high-density device; horizontal resolution; inverted-LOCOS channel isolation; mask width; maximum signal charge; output current; photosensitivity; single p-well vertical overflow drain; total random noise; unit cell dimensions; vertical CCD register; Charge coupled devices; Charge-coupled image sensors; Dynamic range; Electrons; Fabrication; Image resolution; Image sensors; Pixel; Radiofrequency interference; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
