Title :
1.3 μm large spot-size laser diodes with laterally tapered active layer
Author :
Fukano, H. ; Kadota, Y. ; Kondo, Y. ; Ueki, M. ; Sakai, Y. ; Kasaya, K. ; Yokoyama, K. ; Tohmori, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
8/17/1995 12:00:00 AM
Abstract :
1.3 μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of <3 dB. Threshold currents of 4.7 and 18.0 mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively
Keywords :
laser cavity resonators; laser transitions; optical fabrication; optical losses; semiconductor lasers; waveguide lasers; 1.3 micron; 225 micron; 3 dB; 4.7 to 18 mA; buried heterostructure laser process; large spot-size laser diodes; laterally tapered active layer; singlemode-fibre coupling losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950965
