DocumentCode
890352
Title
1.3 μm large spot-size laser diodes with laterally tapered active layer
Author
Fukano, H. ; Kadota, Y. ; Kondo, Y. ; Ueki, M. ; Sakai, Y. ; Kasaya, K. ; Yokoyama, K. ; Tohmori, Y.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
31
Issue
17
fYear
1995
fDate
8/17/1995 12:00:00 AM
Firstpage
1439
Lastpage
1440
Abstract
1.3 μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of <3 dB. Threshold currents of 4.7 and 18.0 mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively
Keywords
laser cavity resonators; laser transitions; optical fabrication; optical losses; semiconductor lasers; waveguide lasers; 1.3 micron; 225 micron; 3 dB; 4.7 to 18 mA; buried heterostructure laser process; large spot-size laser diodes; laterally tapered active layer; singlemode-fibre coupling losses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950965
Filename
464165
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