Title :
Circuit simulations of alpha-particle-induced soft errors in MOS dynamic RAMs
Author :
Mcpartland, Richard J.
fDate :
2/1/1981 12:00:00 AM
Abstract :
Sense-amplifier column and cell alpha particle hits have been simulated for a 64K MOS dynamic RAM using SPICE, a circuit simulation program. Simulations investigate the influence of circuit, timing, and layout on the possibility of alpha soft errors. The column to sense amplifier impedance is found to strongly influence the likelihood of soft errors. Results are useful for designing for alpha immunity.
Keywords :
Alpha-particle effects; Circuit analysis computing; Digital simulation; Field effect integrated circuits; Integrated memory circuits; Random-access storage; alpha-particle effects; circuit analysis computing; digital simulation; field effect integrated circuits; integrated memory circuits; random-access storage; Alpha particles; Capacitors; Circuit simulation; Computer errors; Computer simulation; DRAM chips; P-n junctions; Parasitic capacitance; Random access memory; SPICE;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051532
