Title :
Organic-on-inorganic semiconductor photodetector
Author :
So, Franky F. ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng. & Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA
fDate :
1/1/1989 12:00:00 AM
Abstract :
High-efficiency high-bandwidth organic-on-inorganic (OI) semiconductor heterojunction photodetectors are discussed. The devices consist of a thin layer of the organic semiconductor perylenetetracarboxylic dianhydride (PTCDA) in contact with an inorganic semiconductor (Si) substrate. Indium tin oxide (ITO) is used as a transparent ohmic contact to the organic film. The external quantum efficiency of the detector was 85%, giving an internal quantum efficiency approaching 100%. The response time to fast optical pulses was 5 ns. Response times of OI detectors can be further reduced to about 100 ps by optimization of device parameters
Keywords :
organic compounds; organic semiconductors; photodetectors; semiconductor junctions; silicon; 100 ps; 5 ns; 85 percent; ITO; InSnO; Si substrate; external quantum efficiency; fast optical pulses; heterojunction photodetectors; internal quantum efficiency; optimization; organic semiconductor; perylenetetracarboxylic dianhydride; response time; transparent ohmic contact; Delay; Detectors; Heterojunctions; Indium tin oxide; Ohmic contacts; Optical films; Organic semiconductors; Photodetectors; Semiconductor films; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
