Organic-on-inorganic semiconductor photodetector

Author

So, Franky F. ; Forrest, Stephen R.

Author_Institution

Dept. of Electr. Eng. & Mater. Sci., Univ. of Southern California, Los Angeles, CA, USA

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

66

Lastpage

69

Abstract

High-efficiency high-bandwidth organic-on-inorganic (OI) semiconductor heterojunction photodetectors are discussed. The devices consist of a thin layer of the organic semiconductor perylenetetracarboxylic dianhydride (PTCDA) in contact with an inorganic semiconductor (Si) substrate. Indium tin oxide (ITO) is used as a transparent ohmic contact to the organic film. The external quantum efficiency of the detector was 85%, giving an internal quantum efficiency approaching 100%. The response time to fast optical pulses was 5 ns. Response times of OI detectors can be further reduced to about 100 ps by optimization of device parameters

Keywords

organic compounds; organic semiconductors; photodetectors; semiconductor junctions; silicon; 100 ps; 5 ns; 85 percent; ITO; InSnO; Si substrate; external quantum efficiency; fast optical pulses; heterojunction photodetectors; internal quantum efficiency; optimization; organic semiconductor; perylenetetracarboxylic dianhydride; response time; transparent ohmic contact; Delay; Detectors; Heterojunctions; Indium tin oxide; Ohmic contacts; Optical films; Organic semiconductors; Photodetectors; Semiconductor films; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21179

Filename

21179