DocumentCode
890449
Title
Transient analysis of lateral transistors for use in CHL circuits
Author
Ram, G.V. ; Tyagi, Man S.
Volume
16
Issue
2
fYear
1981
fDate
4/1/1981 12:00:00 AM
Firstpage
66
Lastpage
73
Abstract
Transient response of the lateral transistor under collector excitation with a constant emitter-base bias has been analyzed using the charge control model. The use of this analysis in the study of the switching behavior of CHL and CHIL circuits is indicated. The similarity of CHL switching with that in I/SUP 2/L circuits is pointed out. The dependence of the rise and storage times of the transistor on collector current has been studied. The storage time is found to decrease with the discharging collector current, whereas the rise time increases with the initial collector current. The storage time can be lower than the rise time. The contribution of the model time constants to the response time constant has been investigated.
Keywords
Bipolar transistor circuits; Logic circuits; Semiconductor device models; bipolar transistor circuits; logic circuits; semiconductor device models; Charge carrier processes; Circuits; Doping; Electron emission; Geometry; Kelvin; Materials science and technology; Temperature control; Transient analysis; Velocity control;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1981.1051543
Filename
1051543
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