DocumentCode :
890449
Title :
Transient analysis of lateral transistors for use in CHL circuits
Author :
Ram, G.V. ; Tyagi, Man S.
Volume :
16
Issue :
2
fYear :
1981
fDate :
4/1/1981 12:00:00 AM
Firstpage :
66
Lastpage :
73
Abstract :
Transient response of the lateral transistor under collector excitation with a constant emitter-base bias has been analyzed using the charge control model. The use of this analysis in the study of the switching behavior of CHL and CHIL circuits is indicated. The similarity of CHL switching with that in I/SUP 2/L circuits is pointed out. The dependence of the rise and storage times of the transistor on collector current has been studied. The storage time is found to decrease with the discharging collector current, whereas the rise time increases with the initial collector current. The storage time can be lower than the rise time. The contribution of the model time constants to the response time constant has been investigated.
Keywords :
Bipolar transistor circuits; Logic circuits; Semiconductor device models; bipolar transistor circuits; logic circuits; semiconductor device models; Charge carrier processes; Circuits; Doping; Electron emission; Geometry; Kelvin; Materials science and technology; Temperature control; Transient analysis; Velocity control;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1981.1051543
Filename :
1051543
Link To Document :
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