• DocumentCode
    890449
  • Title

    Transient analysis of lateral transistors for use in CHL circuits

  • Author

    Ram, G.V. ; Tyagi, Man S.

  • Volume
    16
  • Issue
    2
  • fYear
    1981
  • fDate
    4/1/1981 12:00:00 AM
  • Firstpage
    66
  • Lastpage
    73
  • Abstract
    Transient response of the lateral transistor under collector excitation with a constant emitter-base bias has been analyzed using the charge control model. The use of this analysis in the study of the switching behavior of CHL and CHIL circuits is indicated. The similarity of CHL switching with that in I/SUP 2/L circuits is pointed out. The dependence of the rise and storage times of the transistor on collector current has been studied. The storage time is found to decrease with the discharging collector current, whereas the rise time increases with the initial collector current. The storage time can be lower than the rise time. The contribution of the model time constants to the response time constant has been investigated.
  • Keywords
    Bipolar transistor circuits; Logic circuits; Semiconductor device models; bipolar transistor circuits; logic circuits; semiconductor device models; Charge carrier processes; Circuits; Doping; Electron emission; Geometry; Kelvin; Materials science and technology; Temperature control; Transient analysis; Velocity control;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1981.1051543
  • Filename
    1051543