High performance double-doped InAlAs/InGaAs/InP heterojunction FET with potential for millimetre-wave power applications

Author

Iwata, Naoki ; Tomita, Masaru ; Kuzuhara, Masaaki

Author_Institution

NEC Corp., Shiga, Japan

Volume

29

Issue

7

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

628

Lastpage

629

Abstract

Lattice matched InAlAs/InGaAs/InP heterojunction field-effect transistors (HJFETs), which have carrier supplying layers on and beneath the undoped InGaAs channel layer, have been successfully fabricated. A selective recess of the InGaAs channel edge at a mesa sidewall together with the use of a wide recess gate structure leads to a 5.7 V gate-drain breakdown voltage without kink effects. The fabricated HJFET with a 0.15*100 mu m² T-shaped gate exhibits a 700 mA/mm maximum drain current, a voltage gain of 14, and a 345 GHz maximum frequency of oscillation.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; junction gate field effect transistors; power transistors; semiconductor epitaxial layers; solid-state microwave devices; 0.15 micron; 100 micron; 345 GHz; 5.7 V; EHF; HJFETs; InAlAs-InGaAs-InP; T-shaped gate; carrier supplying layers; double doped HJFET; drain current; gate-drain breakdown voltage; heterojunction field-effect transistors; lattice matched; maximum frequency of oscillation; mesa sidewall; millimetre-wave power; semiconductors; undoped InGaAs channel layer; voltage gain; wide recess gate structure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930420

Filename

211836