• DocumentCode
    890505
  • Title

    Gallium arsenide bulk acoustic wave resonators fabricated using sol-gel technology

  • Author

    Awang, Z. ; Miles, R.E.

  • Author_Institution
    Leeds Univ., UK
  • Volume
    29
  • Issue
    7
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    626
  • Lastpage
    628
  • Abstract
    GaAs/piezoelectric composite bulk acoustic wave resonators have been fabricated using a sol-gel technique. PbTiO3 films have been prepared using a new sol-gel route. Resonance frequencies in the region of 2 GHz with Q valves of 700 have been observed. The process is compatible with existing GaAs device and circuit processing.
  • Keywords
    III-V semiconductors; Q-factor; acoustic microwave devices; acoustic resonators; crystal resonators; gallium arsenide; lead compounds; piezoelectric thin films; sol-gel processing; solid-state microwave devices; 2 GHz; GaAs processing compatible; PbTiO 3 films; PbTiO 3-GaAs; Q valves; bulk acoustic wave resonators; low annealing temperatures; semiconductors; sol-gel technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930419
  • Filename
    211837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890505