DocumentCode :
890505
Title :
Gallium arsenide bulk acoustic wave resonators fabricated using sol-gel technology
Author :
Awang, Z. ; Miles, R.E.
Author_Institution :
Leeds Univ., UK
Volume :
29
Issue :
7
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
626
Lastpage :
628
Abstract :
GaAs/piezoelectric composite bulk acoustic wave resonators have been fabricated using a sol-gel technique. PbTiO3 films have been prepared using a new sol-gel route. Resonance frequencies in the region of 2 GHz with Q valves of 700 have been observed. The process is compatible with existing GaAs device and circuit processing.
Keywords :
III-V semiconductors; Q-factor; acoustic microwave devices; acoustic resonators; crystal resonators; gallium arsenide; lead compounds; piezoelectric thin films; sol-gel processing; solid-state microwave devices; 2 GHz; GaAs processing compatible; PbTiO 3 films; PbTiO 3-GaAs; Q valves; bulk acoustic wave resonators; low annealing temperatures; semiconductors; sol-gel technology;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930419
Filename :
211837
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=890505
بازگشت