• DocumentCode
    890527
  • Title

    Characterization of surface mobility in MOS structures containing interfacial cesium ions

  • Author

    Watt, Jeffrey T. ; Fishbein, Bruce J. ; Plummer, James D.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • Volume
    36
  • Issue
    1
  • fYear
    1989
  • fDate
    1/1/1989 12:00:00 AM
  • Firstpage
    96
  • Lastpage
    100
  • Abstract
    The degradation of inversion-layer electron and hole mobility in silicon MOS devices by interface charge at 295 and 77 K is discussed. The charge was controllably introduced using cesium implanted into the gate oxide and subsequently diffused to the oxide-substrate interface. The charged-impurity-scattering component of the mobility has been extracted and characterized as a function of inversion charge density and cesium dose
  • Keywords
    carrier mobility; impurity scattering; interface electron states; inversion layers; metal-insulator-semiconductor structures; surface scattering; 295 K; 77 K; MOS structures; Si-SiO2:Cs; charged-impurity-scattering component; electron mobility; hole mobility; interface charge; inversion charge density; inversion-layer; oxide-substrate interface; surface mobility; Charge carrier processes; Contracts; Degradation; Doping; Impurities; MOS devices; MOSFET circuits; Scattering; Temperature; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.21184
  • Filename
    21184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890527