Spreading Antenna Effect of PID in Damascene Interconnect Process

Author

Matsunaga, Noriaki ; Yamaguchi, Hitomi ; Shibata, Hideki

Author_Institution

Center for Semicond. R&D Toshiba Corp., Yokohama

Volume

54

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1486

Lastpage

1491

Abstract

Plasma-induced charging damage (PID) in a damascene interconnect process was investigated in detail. We found that the antenna area dependence of the PID in the damascene interconnect process is not a simple relation to the upper surface area of the metal wiring. Since the charges are injected through the dielectric films on the wiring, the effective antenna area that can collect the charges became larger than the area that is defined by the upper surface area of the metal wiring. The effective antenna area was studied by electrical field simulation, and a spreading antenna width was proposed and defined.

Keywords

MOSFET; dielectric thin films; interconnections; plasma materials processing; wiring; MOSFET; damascene interconnect process; damascene wiring process; dielectric films; electrical field simulation; metal wiring; plasma-induced charging damage; spreading antenna effect; Dielectric films; Electrodes; Etching; MOSFET circuits; Plasma applications; Plasma devices; Protection; Semiconductor diodes; Surface charging; Wiring; Antenna effect; damascene interconnect; plasma-induced charging damage (PID);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.896360

Filename

4215183