Title :
Tensile strained QW structure for low-threshold operation of short-wavelength, AlGaInP LDs emitting in the 630 nm band
Author :
Tanaka, T. ; Yanagisawa, H. ; Yano, Sumio ; Minagawa, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
The amount of tensile strain introduced into QWs and the optimum QW structure are evaluated for low-threshold operation of AlGaInP LDs in the wavelength range 630-640 nm. Very low threshold current of 32 mA under CW operation at 20 degrees C is achieved in an index-guided SQW LD emitting at 632 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 20 degC; 32 mA; 630 to 640 nm; 632 nm; AlGaInP; CW operation; QW structure; index-guided SQW LD; low-threshold operation; quantum well structure; semiconductor lasers; short-wavelength; tensile strain; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930406
