DocumentCode
890637
Title
High-field electron distribution function in GaAs
Author
Stenflo, L.
Volume
55
Issue
6
fYear
1967
fDate
6/1/1967 12:00:00 AM
Firstpage
1088
Lastpage
1089
Abstract
This paper considers two important aspects of the electron distribution function in n-GaAs: the anisotropy of the distribution function at high applied fields and the nonparabolicity of the central valley. The number of electrons in the central and outer valleys is calculated by numerical methods for a typical value of the electric field both for a parabolic and for a slightly nonparabolic
Keywords
Anisotropic magnetoresistance; Distribution functions; Electrons; Equations; Gallium arsenide; Measurement errors; Optical scattering; Phonons; Probes; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5735
Filename
1447665
Link To Document