• DocumentCode
    890638
  • Title

    Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 mu m semiconductor lasers

  • Author

    Joindot, I.

  • Author_Institution
    France Telecom, CNET, Lannion, France
  • Volume
    29
  • Issue
    7
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    604
  • Lastpage
    606
  • Abstract
    Measurements are reported of intervalence band absorption (IVBA) coefficient k0 in three types of active layer structure: bulk, unstrained (MQW) and strained multiquantum wells. The IVBA measurements are performed by observing the spontaneous emission from the uncleaved facets of DCPBH Fabry-Perot lasers. k0=(3.7+or-0.3)*10-17 cm2 is obtained for bulk, (1.4+or-0.2)*10-16 cm2 for MQW unstrained and (3.5+or-0.3)*10-17 cm2 for strained MQW structures.
  • Keywords
    laser transitions; laser variables measurement; semiconductor lasers; 1.55 micron; DC-PBH; DCPBH Fabry-Perot lasers; absorption coefficient measurements; active layer structure; bulk layer; double channel; intervalence band; multiquantum well; planar buried heterostructure; semiconductor lasers; spontaneous emission; strained MQW structures; uncleaved facets; unstrained MQW;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930405
  • Filename
    211851