DocumentCode :
890638
Title :
Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained multiquantum well 1.55 mu m semiconductor lasers
Author :
Joindot, I.
Author_Institution :
France Telecom, CNET, Lannion, France
Volume :
29
Issue :
7
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
604
Lastpage :
606
Abstract :
Measurements are reported of intervalence band absorption (IVBA) coefficient k0 in three types of active layer structure: bulk, unstrained (MQW) and strained multiquantum wells. The IVBA measurements are performed by observing the spontaneous emission from the uncleaved facets of DCPBH Fabry-Perot lasers. k0=(3.7+or-0.3)*10-17 cm2 is obtained for bulk, (1.4+or-0.2)*10-16 cm2 for MQW unstrained and (3.5+or-0.3)*10-17 cm2 for strained MQW structures.
Keywords :
laser transitions; laser variables measurement; semiconductor lasers; 1.55 micron; DC-PBH; DCPBH Fabry-Perot lasers; absorption coefficient measurements; active layer structure; bulk layer; double channel; intervalence band; multiquantum well; planar buried heterostructure; semiconductor lasers; spontaneous emission; strained MQW structures; uncleaved facets; unstrained MQW;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930405
Filename :
211851
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=890638
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