DocumentCode
890684
Title
Experimental Observation of Halo-Type Boundary Image Sticking in AC Plasma Display Panel
Author
Park, Choon-Sang ; Tae, Heung-Sik ; Kwon, Young-Kuk ; Heo, Eun Gi
Author_Institution
Kyungpook Nat. Univ., Daegu
Volume
54
Issue
6
fYear
2007
fDate
6/1/2007 12:00:00 AM
Firstpage
1315
Lastpage
1320
Abstract
Infrared-emission observations show that the discharge characteristics related to the MgO surface are improved in both the image sticking and boundary image sticking cells, whereas luminance observations show a deterioration in the visible-conversion characteristics related to the phosphor layer in both the image sticking and boundary image sticking cells. Consequently, the image sticking phenomenon is strongly related to the Mg species sputtered from the MgO surface of the discharge cells due to an iterant strong sustain discharge. In particular, halo-type boundary image sticking is due to the redeposition of Mg species on both the MgO and phosphor layers in the nondischarge region adjacent to the discharge region, as confirmed by Vt close curve, time-of-flight secondary ion mass spectrometry, and scanning electron microscope analyses.
Keywords
magnesium compounds; phosphors; plasma displays; scanning electron microscopy; secondary ion mass spectroscopy; sputter deposition; surface discharges; time of flight mass spectroscopy; AC plasma display panel; MgO; boundary image sticking cells; discharge characteristics; discharge region; halo-type boundary image sticking; infrared-emission observations; luminance observations; nondischarge region; phosphor layer; scanning electron microscope analysis; sputter deposition; time-of-flight secondary ion mass spectrometry; visible-conversion characteristics; Business; Helium; Image analysis; Mass spectroscopy; Phosphors; Plasma displays; Scanning electron microscopy; Surface discharges; Surface morphology; Technological innovation; 42-in ac plasma display panel (PDP) module; $V_{t}$ close curve; Halo-type boundary image sticking; redeposition of Mg species; scanning electron microscope (SEM) analyses; time-of-flight secondary ion mass spectrometry (TOF-SIMS);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.896578
Filename
4215194
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