Title :
670 nm semiconductor laser diode pumped erbium-doped fibre amplifiers
Author :
Horiguchi, M. ; Yoshino, Kohzoh ; Shimizu, Maiko ; Yamada, Makoto
Author_Institution :
NTT Optoelectronics Labs., Ibaraki, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
A highly efficient Er-doped fibre amplifier pumped by a visible laser diode is reported. Using a 670 nm AlGaInP laser diode as a pump light source and a high NA erbium-doped fibre, the EDFA realised a maximum signal gain of 33 dB at 1535 nm, with a saturated output power of 4 dBm. A maximum gain coefficient of 3.0 dB/mW was achieved for 670 nm laser diode pumping.
Keywords :
erbium; fibre lasers; laser transitions; optical pumping; 1535 nm; 33 dB; 670 nm; AlGaInP laser; Er-doped fibre; LD pumped fibre amplifier; pump light source; semiconductor laser; visible laser diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930398
