DocumentCode :
890707
Title :
1.5 V 1 K-CMOS-RAM with only 8 pins
Author :
Meusburger, GÜnther
Volume :
16
Issue :
3
fYear :
1981
fDate :
6/1/1981 12:00:00 AM
Firstpage :
190
Lastpage :
194
Abstract :
A 256-bit/spl times/4-bit static RAM working on a supply voltage down to 1.2 V is described. A serial interface for the address and the data with a 4-bit bus reduces the pincount of the RAM to only 8. Special design techniques to reach the design goal-very low power at a reasonable circuit speed-are discussed in detail. The device is fabricated in a low power silicon gate CMOS process. An operating power of 500 /spl mu/W/MHz and a standby power of less than 1 /spl mu/W at 1.5 V supply voltage was achieved. With this serial interface a cycle time of 1 /spl mu/s at 1.5 V was measured.
Keywords :
Field effect integrated circuits; Integrated memory circuits; Random-access storage; field effect integrated circuits; integrated memory circuits; random-access storage; Circuits; Filtering; Large scale integration; Microelectronics; Microprocessors; Microwave propagation; Pins; Signal processing; Telecommunications;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1981.1051572
Filename :
1051572
Link To Document :
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