The Electrical Properties of Unidirectional Metal-Induced Lateral Crystallized Polycrystalline-Silicon Thin-Film Transistors

Author

Song, Nam-Kyu ; Kim, Min-Sun ; Han, Shin-Hee ; Kim, Young-Su ; Joo, Seung-Ki

Author_Institution

Seoul Nat. Univ., Seoul

Volume

54

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

1420

Lastpage

1424

Abstract

It has been known that adjacent Pd enhances the crystallization rate in Ni metal-induced lateral crystallization (Ni-MILC) and this knowledge has been used to fabricate the unidirectional MILC thin-film transistors (TFTs), which eliminate the boundary formed at the center of TFT channel in a normal MILC TFTs. It is discovered that the MILC/MILC boundary (MMB) is responsible for the high leakage current and low field- effect mobility. The electrical properties of unidirectional MILC TFTs (Width/Length = 10/10 mum) improved considerably comparing to those of MILC TFTs containing the MMB. The leakage current and field-effect mobility, which have been regarded as obstacles for industrialization of the MILC process, measure to be 2.1 X 10-11 A and 83 cm²/ V ldr s, respectively.

Keywords

elemental semiconductors; leakage currents; nickel; semiconductor thin films; silicon; thin film transistors; Ni; Si; electrical properties; field-effect mobility; leakage current; metal-induced lateral crystallization; unidirectional polycrystalline-silicon thin-film transistors; Active matrix technology; Crystallization; Current measurement; Glass; Leakage current; Microwave integrated circuits; Silicides; Substrates; Temperature; Thin film transistors; Metal-induced lateral crystallization (MILC); Pd; polycrystalline-silicon (poly-Si) thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.896357

Filename

4215197