A 1.5 V single-supply one-transistor CMOS EEPROM

Describes a 1.5 V single-supply one-transistor p-channel CMOS EEPROM array which is fabricated with a double polysilicon gate 7-mask CMOS technology. Avalanche injection and Fowler-Nordheim emission are used as very low power programming mechanisms. A thin oxide of 28 nm allows write and erase voltages below -30 V. They are generated on-chip by voltage multipliers and fed by 1.5 V logic circuitry to the matrix array. Results measured on a 16/spl times/4 bit word-erasable test array are presented.