• DocumentCode
    890717
  • Title

    Selective metallisation on Ge for ohmic contact to GaAs

  • Author

    Mitani, K. ; Imamura, Yusuke

  • Author_Institution
    Hitachi Ltd., Tokyo, Japan
  • Volume
    29
  • Issue
    7
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    589
  • Lastpage
    590
  • Abstract
    Refractory W electrodes are selectively deposited on a Ge contact layer with no W deposition on the surrounding SiO2 by employing WF6/SiH4 chemistry. The contact resistance of CVD-W to heavily-doped p-Ge is below 10-7 Omega cm2, which is suitable for selective ohmic metallisation for GaAs devices.
  • Keywords
    CVD coatings; contact resistance; elemental semiconductors; germanium; heavily doped semiconductors; metallisation; ohmic contacts; semiconductor-metal boundaries; tungsten; GaAs devices; Ge contact layer; SiH 4; SiO 2; W deposition; WF 6; WF 6-SiH 4 chemistry; contact resistance; heavily-doped p-Ge; ohmic contact; refractory W electrodes; selective ohmic metallisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930395
  • Filename
    211861
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890717