DocumentCode
890734
Title
Extraction of physical device dimensions of SOI MOSFETs from gate capacitance measurements
Author
Flandre, Denis ; Gentinne, B.
Author_Institution
Lab. de Microelectron., Louvain la Neuve, Belgium
Volume
29
Issue
7
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
586
Lastpage
588
Abstract
A new technique unique to SOI MOSFETs is presented for extracting the physical device dimensions (effective gate length and gate oxide and film thicknesses) from a set of gate capacitance measurements on transistors with various lengths.
Keywords
capacitance measurement; elemental semiconductors; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; SOI MOSFETs; Si; effective gate length; film thicknesses; gate capacitance measurements; gate oxide; physical device dimensions; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930393
Filename
211863
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