Title :
Extraction of physical device dimensions of SOI MOSFETs from gate capacitance measurements
Author :
Flandre, Denis ; Gentinne, B.
Author_Institution :
Lab. de Microelectron., Louvain la Neuve, Belgium
fDate :
4/1/1993 12:00:00 AM
Abstract :
A new technique unique to SOI MOSFETs is presented for extracting the physical device dimensions (effective gate length and gate oxide and film thicknesses) from a set of gate capacitance measurements on transistors with various lengths.
Keywords :
capacitance measurement; elemental semiconductors; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; SOI MOSFETs; Si; effective gate length; film thicknesses; gate capacitance measurements; gate oxide; physical device dimensions; transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930393
