• DocumentCode
    890741
  • Title

    Low threshold voltage vertical cavity surface-emitting laser

  • Author

    Lear, K.L. ; Chalmers, S.A.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    29
  • Issue
    7
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    584
  • Lastpage
    586
  • Abstract
    Vertical-cavity surface emitting laser diodes with threshold voltages as low as 1.48 V are demonstrated. The devices have low-resistance epitaxial mirrors, and current passes through the entire mirror stack. The low threshold voltage results from both low threshold current densities and mirrors with low resistivities even at low current densities. The laser fabrication sequence is relatively quick and simple and allows for the rapid characterisation of vertical-cavity surface-emitting laser material.
  • Keywords
    current density; laser cavity resonators; semiconductor lasers; 1.48 V; laser fabrication; low threshold current densities; low threshold voltage; low-resistance epitaxial mirrors; mirror stack; semiconductor lasers; surface-emitting laser; vertical cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930392
  • Filename
    211864