DocumentCode :
890741
Title :
Low threshold voltage vertical cavity surface-emitting laser
Author :
Lear, K.L. ; Chalmers, S.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
29
Issue :
7
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
584
Lastpage :
586
Abstract :
Vertical-cavity surface emitting laser diodes with threshold voltages as low as 1.48 V are demonstrated. The devices have low-resistance epitaxial mirrors, and current passes through the entire mirror stack. The low threshold voltage results from both low threshold current densities and mirrors with low resistivities even at low current densities. The laser fabrication sequence is relatively quick and simple and allows for the rapid characterisation of vertical-cavity surface-emitting laser material.
Keywords :
current density; laser cavity resonators; semiconductor lasers; 1.48 V; laser fabrication; low threshold current densities; low threshold voltage; low-resistance epitaxial mirrors; mirror stack; semiconductor lasers; surface-emitting laser; vertical cavity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19930392
Filename :
211864
Link To Document :
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