DocumentCode
890741
Title
Low threshold voltage vertical cavity surface-emitting laser
Author
Lear, K.L. ; Chalmers, S.A.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
29
Issue
7
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
584
Lastpage
586
Abstract
Vertical-cavity surface emitting laser diodes with threshold voltages as low as 1.48 V are demonstrated. The devices have low-resistance epitaxial mirrors, and current passes through the entire mirror stack. The low threshold voltage results from both low threshold current densities and mirrors with low resistivities even at low current densities. The laser fabrication sequence is relatively quick and simple and allows for the rapid characterisation of vertical-cavity surface-emitting laser material.
Keywords
current density; laser cavity resonators; semiconductor lasers; 1.48 V; laser fabrication; low threshold current densities; low threshold voltage; low-resistance epitaxial mirrors; mirror stack; semiconductor lasers; surface-emitting laser; vertical cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19930392
Filename
211864
Link To Document