DocumentCode
890743
Title
A coplanar CMOS power switch
Author
Habekotté, Ernst ; Hoefflinger, Bernd ; Renker, Wolfgang ; Zimmer, Günter
Volume
16
Issue
3
fYear
1981
fDate
6/1/1981 12:00:00 AM
Firstpage
212
Lastpage
226
Abstract
A 300 V power switch in a high-voltage CMOS technology compatible with a low-voltage MOS/bipolar technology is presented. This circuit can switch positive and negative 150 V pulses with rise and fall times of 100 ns for a 200 pF capacitive load. The switch has a low-voltage input control (/spl plusmn/15 V). Using earth-symmetrical non-overlapping high-voltage pulses as dynamic supply voltages, it is possible to reduce the power dissipation during the switching time considerably in comparison with the power dissipation of power switches, which use static (i.e., constant) supply voltages under the same conditions.
Keywords
Field effect integrated circuits; Integrated circuit technology; Semiconductor switches; Switching circuits; field effect integrated circuits; integrated circuit technology; semiconductor switches; switching circuits; CMOS technology; Driver circuits; Electrodes; Frequency; Packaging; Power dissipation; Pulsed power supplies; Solid state circuits; Switches; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1981.1051576
Filename
1051576
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