Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at approximately 2.0 mu m

Author

Forouhar, S. ; Keo, S. ; Larsson, A. ; Ksendzov, A. ; Temkin, H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

29

Issue

7

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

574

Lastpage

576

Abstract

The first low threshold continuous operation of InGaAs strained layer quantum well lasers at approximately 2.0 mu m is reported. The threshold current density of 5 mu m wide and 1.5 mm long ridge waveguide lasers was less than 380 A/cm². The external differential quantum efficiency of 1 mm long lasers was as high as 15% and laser operation was observed at temperatures as high as 50 degrees C. The lasers are characterised by T₀=54 degrees C which is the highest characteristic temperature ever achieved at this wavelength in any material system.

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical waveguides; semiconductor lasers; 15 percent; 2 micron; 50 to 54 degC; InGaAs-InGaAsP; characteristic temperature; external differential quantum efficiency; low threshold continuous operation; quantum well lasers; ridge waveguide; semiconductor lasers; strained layer; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19930386

Filename

211870