Title :
High-Speed Plated-Wire Memory System
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
fDate :
6/1/1967 12:00:00 AM
Abstract :
The plated-wire memory, combined with functional circuit integration, is a strong contender for economic, high-speed, large-capacity memory systems. Important attributes of the plated-wire memory are high-speed DRO and NDRO capability, low digit WRITE current, high output sense signal and low word-to-digit line crosspoint capacitance. Design and operational results for a 1024-word by 80-bit store model are reported in detail. Utilizing a transformerless diode matrix for high-speed word selection, an access time of 75 ns and a READ-WRITE cycle time of 150 ns have been realized.
Keywords :
Capacitance; Coupling circuits; Decoding; Light emitting diodes; Magnetic materials; Rails; Switches; Switching circuits; Timing; Wire; Digital store technology; diode access; high speed; plated-wire memory; random access;
Journal_Title :
Electronic Computers, IEEE Transactions on
DOI :
10.1109/PGEC.1967.264691