Title :
Effects of titanium salicide process on MOSFET characteristics
Author :
Chang, Shuo-Tung ; Chiu, Kuang Yi
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA, USA
fDate :
1/1/1989 12:00:00 AM
Abstract :
The effects of the titanium-salicide (self-aligned silicide) process with different postmetallization anneals on the performance of very thin gate oxide MOSFETs are discussed. Compared to the conventional polycrystalline-silicon (poly-Si) gate process, a titanium-salicide process without enough annealing in hydrogen-containing ambients degrades MOSFET characteristics. However, after hydrogen anneal (but not a nitrogen anneal), the electrical characteristics of the salicided MOSFETs become comparable to those of poly-Si gate MOSFETs. The device degradation has been correlated with interface-state generation through an interface-state density study
Keywords :
annealing; insulated gate field effect transistors; interface electron states; metallisation; semiconductor device testing; titanium compounds; MOSFET characteristics; Si-SiO2; TiSi2-Si; device degradation; electrical characteristics; interface-state density; postmetallization anneals; salicide process; thin gate oxide MOSFETs; Annealing; Capacitance-voltage characteristics; Degradation; Electric variables; Hydrogen; MOSFET circuits; Nitrogen; Silicides; Threshold voltage; Titanium;
Journal_Title :
Electron Devices, IEEE Transactions on
