DocumentCode :
891292
Title :
A bipolar 2500-gate subnanosecond masterslice LSI
Author :
Nakaya, Masao ; Kato, Shuichi ; Tsukamoto, Katsuhiro ; Sakurai, Hiromi ; Kondo, Takashi ; Horiba, Yasutaka
Volume :
16
Issue :
5
fYear :
1981
Firstpage :
558
Lastpage :
562
Abstract :
A bipolar 2500-gate subnanosecond masterslice LSI has been developed for use in computer mainframes. A walled-emitter structure has been realized by using double boron ion implantation with an n-type epitaxial layer to obtain high performance and high packing density. A new cell composed of a pair of adjacent gates provides high utilization of input transistors. A gate delay of 0.58 ns with power dissipation of 0.54 mW/gate has been achieved. The masterslice has been applied to an 18-bit memory data register circuit consisting of 1983 internal logic gates and has been mounted on a new 224-pin plug-in package.
Keywords :
Bipolar integrated circuits; Cellular arrays; Integrated logic circuits; Large scale integration; bipolar integrated circuits; cellular arrays; integrated logic circuits; large scale integration; Boron; Delay; Epitaxial layers; Ion implantation; Large scale integration; Logic circuits; Logic gates; Packaging; Power dissipation; Registers;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1981.1051637
Filename :
1051637
Link To Document :
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