DocumentCode :
891343
Title :
Temperature sensitivity of compound diode-transistor structure
Author :
Hoffman, C.R.
Volume :
55
Issue :
7
fYear :
1967
fDate :
7/1/1967 12:00:00 AM
Firstpage :
1233
Lastpage :
1234
Abstract :
This letter considers the significant device parameters making a current-gain monolithic circuit, using a matched pair of silicon transistors. Equations are derived which relate the current gain to the device characteristics, the parameter matching, and thermal matching.
Keywords :
Circuits; Diffusion processes; Equations; Etching; Power dissipation; Semiconductor diodes; Semiconductor materials; Silicon; Temperature sensors; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1967.5812
Filename :
1447742
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=891343
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