DocumentCode
891343
Title
Temperature sensitivity of compound diode-transistor structure
Author
Hoffman, C.R.
Volume
55
Issue
7
fYear
1967
fDate
7/1/1967 12:00:00 AM
Firstpage
1233
Lastpage
1234
Abstract
This letter considers the significant device parameters making a current-gain monolithic circuit, using a matched pair of silicon transistors. Equations are derived which relate the current gain to the device characteristics, the parameter matching, and thermal matching.
Keywords
Circuits; Diffusion processes; Equations; Etching; Power dissipation; Semiconductor diodes; Semiconductor materials; Silicon; Temperature sensors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5812
Filename
1447742
Link To Document