DocumentCode
891386
Title
An epitaxial GaAs field-effect transistor
Author
Hooper, W.W.
Volume
55
Issue
7
fYear
1967
fDate
7/1/1967 12:00:00 AM
Firstpage
1237
Lastpage
1238
Abstract
Electrical characteristics of an epitaxial GaAs FET are reported. The device is of an interdigitated structure, employing alloyed evaporated metal source and drain contacts, and an evaporated Schottky barrier gate. Transconductance of the order of 20 millimhos is obtained, a factor of ∼5 better than a silicon device of identical geometry. A cutoff frequency of ∼3 GHz is obtained. The device characteristics demonstrate the feasibility of such a device for use at microwave frequencies.
Keywords
Contacts; Cutoff frequency; Electric variables; FETs; Gallium arsenide; Geometry; Microwave frequencies; Schottky barriers; Silicon devices; Transconductance;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5817
Filename
1447747
Link To Document