DocumentCode
891437
Title
Matching properties, and voltage and temperature dependence of MOS capacitors
Author
McCreary, James L.
Volume
16
Issue
6
fYear
1981
fDate
12/1/1981 12:00:00 AM
Firstpage
608
Lastpage
616
Abstract
The matching properties of MOS capacitors are modeled and compared with measured data. A weighted-capacitor array design approach is described. Voltage and temperature dependence of MOS capacitors are analyzed, modeled, and compared with measured data. It is shown that to a first-order heavily doped polysilicon accumulates and depletes similar to crystalline silicon.
Keywords
Capacitors; Metal-insulator-semiconductor devices; capacitors; metal-insulator-semiconductor devices; Capacitance; Circuits; Dielectric constant; MOS capacitors; Measurement standards; Permittivity; Silicon compounds; Space charge; Temperature dependence; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1981.1051651
Filename
1051651
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