Title :
Matching properties, and voltage and temperature dependence of MOS capacitors
Author :
McCreary, James L.
fDate :
12/1/1981 12:00:00 AM
Abstract :
The matching properties of MOS capacitors are modeled and compared with measured data. A weighted-capacitor array design approach is described. Voltage and temperature dependence of MOS capacitors are analyzed, modeled, and compared with measured data. It is shown that to a first-order heavily doped polysilicon accumulates and depletes similar to crystalline silicon.
Keywords :
Capacitors; Metal-insulator-semiconductor devices; capacitors; metal-insulator-semiconductor devices; Capacitance; Circuits; Dielectric constant; MOS capacitors; Measurement standards; Permittivity; Silicon compounds; Space charge; Temperature dependence; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1981.1051651
