DocumentCode
891506
Title
Power thyristor rating practices
Author
Read, J.S. ; Dyer, R.F.
Author_Institution
General Electric Company, Auburn, N.Y.
Volume
55
Issue
8
fYear
1967
Firstpage
1288
Lastpage
1301
Abstract
The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. This paper not only explains the meaning of thyristor temperature, voltage, current, and gate ratings but also presents insights into how these ratings are developed. Both the semiconductor controlled rectifier (SCR), which is properly called a reverse blocking triode thyristor, and the bidirectional thyristor rating methods are discussed. SCR rating are further divided into those applying to phase control applications at power frequencies and those applying to high repetition rate inverter and pulse current appications.
Keywords
Helium; Nonhomogeneous media; Power generation economics; Power semiconductor devices; Power semiconductor switches; Steady-state; Temperature dependence; Temperature measurement; Thyristors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5829
Filename
1447759
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