• DocumentCode
    891506
  • Title

    Power thyristor rating practices

  • Author

    Read, J.S. ; Dyer, R.F.

  • Author_Institution
    General Electric Company, Auburn, N.Y.
  • Volume
    55
  • Issue
    8
  • fYear
    1967
  • Firstpage
    1288
  • Lastpage
    1301
  • Abstract
    The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. This paper not only explains the meaning of thyristor temperature, voltage, current, and gate ratings but also presents insights into how these ratings are developed. Both the semiconductor controlled rectifier (SCR), which is properly called a reverse blocking triode thyristor, and the bidirectional thyristor rating methods are discussed. SCR rating are further divided into those applying to phase control applications at power frequencies and those applying to high repetition rate inverter and pulse current appications.
  • Keywords
    Helium; Nonhomogeneous media; Power generation economics; Power semiconductor devices; Power semiconductor switches; Steady-state; Temperature dependence; Temperature measurement; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5829
  • Filename
    1447759