DocumentCode
891584
Title
Graphical analysis of the I-V characteristics of generalized p-n-p-n devices
Author
Gibbons, James F.
Author_Institution
Stanford University, Stanford, Calif.
Volume
55
Issue
8
fYear
1967
Firstpage
1366
Lastpage
1374
Abstract
A new form of the basic equation for the I-V characteristics of a generalized p-n-p-n device is derived. Approximations are then introduced to obtain a simplified basic equation in which all current-dependent terms appear on one side of the equation and all voltage-dependent terms on the other. A graphical technique for solving the simplified device equation is then described and used to develop and illuminate the family resemblance among a large number of related p-n junction devices; viz., the p-n junction diode, the p-n-p diode, the p-n-p transistor, the p-n-p-n diode, and the p-n-p-n triode.
Keywords
Charge carrier processes; Diodes; Educational institutions; Electrons; Equations; Helium; P-n junctions; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1967.5837
Filename
1447767
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