• DocumentCode
    891584
  • Title

    Graphical analysis of the I-V characteristics of generalized p-n-p-n devices

  • Author

    Gibbons, James F.

  • Author_Institution
    Stanford University, Stanford, Calif.
  • Volume
    55
  • Issue
    8
  • fYear
    1967
  • Firstpage
    1366
  • Lastpage
    1374
  • Abstract
    A new form of the basic equation for the I-V characteristics of a generalized p-n-p-n device is derived. Approximations are then introduced to obtain a simplified basic equation in which all current-dependent terms appear on one side of the equation and all voltage-dependent terms on the other. A graphical technique for solving the simplified device equation is then described and used to develop and illuminate the family resemblance among a large number of related p-n junction devices; viz., the p-n junction diode, the p-n-p diode, the p-n-p transistor, the p-n-p-n diode, and the p-n-p-n triode.
  • Keywords
    Charge carrier processes; Diodes; Educational institutions; Electrons; Equations; Helium; P-n junctions; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5837
  • Filename
    1447767