• DocumentCode
    891710
  • Title

    Top-emitting OLED pixel employing cathode-contact structure with a-Si:H thin-film transistors

  • Author

    Han, C.-W. ; Han, M.K. ; Kim, M.S. ; Nam, W.-J. ; Bae, S.-J. ; Kim, K.-Y. ; Chung, I.J.

  • Author_Institution
    Sch. of Electr. Eng., Seoul Nat. Univ., Seoul
  • Volume
    43
  • Issue
    11
  • fYear
    2007
  • Firstpage
    623
  • Lastpage
    624
  • Abstract
    An active-matrix organic light emitting diode (OLED) display employing a hydrogenated amorphous silicon thin-film transistor prefers a cathode-contact structure to an anode-contact structure. A new normal top-emitting OLED employing cathode-contact structure is proposed. To implement normal OLED structure, the cathode layer on top is separated as sub-pixels by a negative photoresist separator. The current of the cathode-contact structure is maintained 20% higher after 20 h than that of the anode-contact structure during the accelerated life test.
  • Keywords
    amorphous semiconductors; organic light emitting diodes; photoresists; thin film transistors; active-matrix organic light emitting diode display; anode-contact structure; cathode-contact structure; hydrogenated amorphous silicon thin-film transistor; negative photoresist separator; top-emitting OLED pixel;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070706
  • Filename
    4216357
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=891710