• DocumentCode
    891792
  • Title

    Dual Gunn device oscillator with 10mW at 280 GHz

  • Author

    Eisele, H.

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Univ. of Leeds, Leeds
  • Volume
    43
  • Issue
    11
  • fYear
    2007
  • Firstpage
    636
  • Lastpage
    638
  • Abstract
    The performance of an in-line WR-6 waveguide power combiner was evaluated with three second-harmonic InP Gunn devices around 280 GHz. The spacing between the two waveguide cavities was varied using WR-6 waveguide spacers. In one configuration, an output power of 10.5 mW was measured at a second-harmonic frequency of 280.7 GHz. This output power corresponds to an overall DC-to-RF conversion efficiency of 0.33% and a power-combining efficiency of more than 110%.
  • Keywords
    Gunn oscillators; III-V semiconductors; indium compounds; power combiners; DC-RF conversion efficiency; InP; dual Gunn device oscillator; frequency 280 GHz; frequency 280.7 GHz; in-line WR-6 waveguide power combiner; power 10 mW; power 10.5 mW; power-combining efficiency; second-harmonic Gunn device; waveguide cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070936
  • Filename
    4216366