• DocumentCode
    891822
  • Title

    Charge storage in metal-silicon nitride-silicon capacitors

  • Author

    Hutchins, C.L. ; Lade, R.W.

  • Volume
    55
  • Issue
    8
  • fYear
    1967
  • Firstpage
    1494
  • Lastpage
    1495
  • Abstract
    Charge storage in MNS capacitors is presented as a function of time with temperature as a parameter. Activation energies for shifts of flat-band voltage are found to be 0.02 eV and 0.1 eV for two samples that have different deposition parameters.
  • Keywords
    Capacitors; Degradation; Magnetic flux; Pulse measurements; Silicon; Superconducting films; Superconducting magnets; Superconductivity; Transistors; Writing;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5861
  • Filename
    1447791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=891822