Title :
A new method for realizing JFETs and super B´s in a standard bipolar IC process
Author :
Nordholt, Ernst H. ; Nauta, P.K. ; van der Veen, M.
Abstract :
A new method for the realization of p-channel JFETs is presented. It is based on the removal of thin silicon layers by repeated anodic oxidation and etching, allowing the shallow-n (SN) diffusion to penetrate deeper into the shallow-p (SP) region. JFETs with a thin channel are thus obtained with a high yield and good reproducibility.
Keywords :
Integrated circuit technology; Junction gate field effect transistors; Monolithic integrated circuits; Semiconductor technology; integrated circuit technology; junction gate field effect transistors; monolithic integrated circuits; semiconductor technology; Bipolar integrated circuits; Bipolar transistors; Breakdown voltage; Fabrication; JFETs; Reproducibility of results; Silicon; Solid state circuits; Switching circuits; Tin;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051691
