Comparison of carrier velocity gain in uniaxially and biaxially strained N-MOSFETs

The channel length dependence of the stress-induced carrier velocity gain in linear and saturation operation regimes is investigated in uniaxially and biaxially stressed N-MOSFETs. Results indicate that, even though strained CMOS technology offers significant mobility gain (here 55% at maximum), saturation velocity effects strongly reduce its impact on the saturation region as manifested by the degradation of the velocity gain measured at high drain voltage.