• DocumentCode
    892127
  • Title

    Neutron radiation effects in GaAs planar doped barrier diodes

  • Author

    Kearney, M.J. ; Couch, N.R. ; Edwards, M. ; Dale, I.

  • Author_Institution
    GEC-Marconi Ltd., Wembley, UK
  • Volume
    40
  • Issue
    2
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    102
  • Lastpage
    104
  • Abstract
    The degradation of GaAs planar doped barrier diodes subject to neutron irradiation is discussed. It is shown that for fluences as high as 1015 cm-2, the diode characteristics are very well preserved, which strengthens the rationale for using these devices in place of Schottky diodes in harsh working environments such as nuclear instrumentation and space
  • Keywords
    neutron effects; semiconductor diodes; GaAs planar doped barrier diodes; degradation; neutron irradiation; Chemical vapor deposition; Degradation; Gallium arsenide; Lead; Neutron radiation effects; Schottky diodes; Semiconductor diodes; Surface resistance; Thermionic emission; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.212324
  • Filename
    212324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=892127