Title :
Fabrication of High-Performance LDDFET´s with Oxide Sidewall-Spacer Technology
Author :
Tsang, Paul J. ; Ogura, Seiki ; Walker, William W. ; Shepard, Joseph F. ; Critchlow, Dale L.
fDate :
4/1/1982 12:00:00 AM
Abstract :
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO2 sidewall spacers is described. The process is compatible with most conventional polysilicon-gated FET processes and needs no additional photo-masking steps. Excellent control and reproducibility of the n- region of the LDD device are obtained. Measurements from dynamic clock generators have shown that LDDFET´s have as much as 1.9x performance advantage over conventional devices.
Keywords :
Field effect integrated circuits; Insulated gate field effect transistors; Integrated circuit technology; Large scale integration; Circuit optimization; Clocks; Etching; FETs; Fabrication; Integrated circuit measurements; Reproducibility of results; Senior members; Space technology; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051720
