Title :
Single event upset in avionics
Author :
Taber, A. ; Normand, E.
Author_Institution :
IBM Federal Systems Co., Owego, NY, USA
fDate :
4/1/1993 12:00:00 AM
Abstract :
Data from military/experimental flights and laboratory testing indicate that typical non-radiation-hardened 64 K and 256 K static random access memories (SRAMs) can experience a significant soft upset rate at aircraft altitudes due to energetic neutrons created by cosmic ray interactions in the atmosphere. It is suggested that error detection and correction circuitry be considered for all avionics designs containing large amounts of semiconductor memory
Keywords :
SRAM chips; aircraft instrumentation; error correction; error detection; military equipment; neutron effects; 256×103 Bytes; 64×103 Bytes; SRAMs; aircraft altitudes; avionics; error detection and correction circuitry; single event upset; static random access memories; Aerospace electronics; Atmosphere; Circuit testing; Error correction; Laboratories; Military aircraft; Neutrons; SRAM chips; Semiconductor memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
