DocumentCode
892160
Title
Ion microbeam radiation system
Author
Heidel, D.F. ; Bapst, U.H. ; Jenkins, K.A. ; Geppert, L.M. ; Zabel, T.H.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
40
Issue
2
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
127
Lastpage
134
Abstract
An ion microbeam radiation test system has been built for studying radiation-induced charge collection and single event upsets in advanced semiconductor circuits. With this system, it is possible to direct an ion beam of a diameter as small as 1 μm onto a circuit or test structure with a placement accuracy of 1 μm. The components of the system and its operation are described. Applications are described which demonstrate the capabilities of the system
Keywords
automatic test equipment; integrated circuit testing; ion beam applications; ion beam effects; 1 micron; ion microbeam radiation test system; radiation-induced charge collection; semiconductor circuits; single event upsets; Alpha particles; Circuit testing; Energy measurement; Ion beams; Particle measurements; Predictive models; Semiconductor device measurement; Single event upset; System testing; Very large scale integration;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.212328
Filename
212328
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