Title :
Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure
Author :
Iwai, Hiroshi ; Taniguchi, Kenji ; Konaka, Masami ; Maeda, Satoshi ; Nishi, Yoshio
fDate :
4/1/1982 12:00:00 AM
Abstract :
Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.
Keywords :
Field effect integrated circuits; Integrated circuit technology; Large scale integration; Boron; Capacitance measurement; Fabrication; Integrated circuit interconnections; Ion implantation; MOSFETs; Parasitic capacitance; Semiconductor device measurement; Testing; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051726
