Transient behavior of high-field domains in bulk semiconductors
Author :
Kurokawa, Kaneyuki
Volume :
55
Issue :
9
fYear :
1967
Firstpage :
1615
Lastpage :
1616
Abstract :
A simple formula giving the growth rate of high-field domains in bulk semiconductors is derived. When the diffusion constant is small, it reduces to an extension of the equal-area law discussed by Butcher et al.
Keywords :
Anodes; Cathodes; Conducting materials; Conductors; Current density; Dielectric constant; Electron mobility; Poisson equations; Transient analysis; Voltage;
