• DocumentCode
    892324
  • Title

    Transient behavior of high-field domains in bulk semiconductors

  • Author

    Kurokawa, Kaneyuki

  • Volume
    55
  • Issue
    9
  • fYear
    1967
  • Firstpage
    1615
  • Lastpage
    1616
  • Abstract
    A simple formula giving the growth rate of high-field domains in bulk semiconductors is derived. When the diffusion constant is small, it reduces to an extension of the equal-area law discussed by Butcher et al.
  • Keywords
    Anodes; Cathodes; Conducting materials; Conductors; Current density; Dielectric constant; Electron mobility; Poisson equations; Transient analysis; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5913
  • Filename
    1447843
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=892324