• DocumentCode
    892326
  • Title

    Programming Mechanism of Polysilicon Resistor Fuses

  • Author

    Greve, David W.

  • Volume
    17
  • Issue
    2
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    349
  • Lastpage
    354
  • Abstract
    The programming characteristics of polysilicon resistor fuses were investigated. It was found that an open circuit occurs only after the fuse makes a transition to a second-breakdown state in which the current flow is mainly through a molten filament. Filamentary current flow is stable since the resistivity of silicon decreases abruptly upon melting. A simple model was developed which explains the observed I-V characteristics. Fuse opening occurs when the current in second breakdown exceeds a critical current lmin which depends strongly on the fuse thickness and the presence or absence of a passivation layer over the fuse. The gap forms at the positive end, suggesting that the silicon ions move by drift in the applied electric field.
  • Keywords
    Electric fuses; Integrated circuit technology; Large scale integration; Resistors; Silicon; Circuits; Contact resistance; Electric breakdown; Fuses; Power dissipation; Resistors; Silicon; Temperature; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1982.1051740
  • Filename
    1051740