DocumentCode :
892398
Title :
Multidrain NMOS for VLSI Logic Design
Author :
Elmasry, Mohamed I.
Volume :
17
Issue :
2
fYear :
1982
fDate :
4/1/1982 12:00:00 AM
Firstpage :
409
Lastpage :
411
Abstract :
A multidrain NMOS circuit configuration (MD) is studied and its advantages over the conventional pull-up pull-down (PUD) configuration are discussed. These include efficient use of silicon area, less sensitivity to interconnections, less delay times, a controlled value of logic swing which is independent of VDD, and the possibility of integrating into a stacked structure where the load does not consume silicon real state. The MD and the PUD configurations are compatible and the latter is used where a large fan-out is required.
Keywords :
Field effect integrated circuits; Integrated logic circuits; Large scale integration; Capacitance; Delay; Driver circuits; Integrated circuit interconnections; Logic design; Logic devices; MOS devices; Silicon; Threshold voltage; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1982.1051749
Filename :
1051749
Link To Document :
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