Title :
CAD model for threshold and subthreshold conduction in MOSFETs
Author :
Antognetti, P. ; Caviglia, D.D. ; Profumo, E.
fDate :
6/1/1982 12:00:00 AM
Abstract :
The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. The proposed model shows better agreement to experimental results than previous models in the subthreshold and threshold regions, and is well suited for use in circuit simulation programs; the authors have implemented it in MSINC and SPICE programs, and simulation results are compared to experimental data for a micropower amplifier.
Keywords :
Circuit CAD; Insulated gate field effect transistors; Semiconductor device models; circuit CAD; insulated gate field effect transistors; semiconductor device models; Analytical models; Circuit simulation; Electronic components; MOS devices; MOSFET circuits; Numerical analysis; Operational amplifiers; SPICE; Subthreshold current; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1982.1051759
