GaAs MESFET ICs for gigabit logic applications

Author

Nuzillat, Gérard ; Perea, Ernesto H. ; Bert, Georges ; Damay-Kavala, Fatma ; Gloanec, Maurice ; Peltier, Michel ; Ngu, Tung Pham ; Arnodo, Christian

Volume

17

Issue

3

fYear

1982

fDate

6/1/1982 12:00:00 AM

Firstpage

569

Lastpage

584

Abstract

This paper gives an overview of the basic concepts used in the design and fabrication of gallium arsenide MESFET integrated circuits intended for gigabit logic applications. The present status of speed-power performances, packing densities, and integration levels is presented on the basis of some MSI and LSI MESFET IC realizations made possible by the principal GaAs logic approaches to date. Finally, the potential field of application and future trends of GaAs IC technology are assessed.

Keywords

Field effect integrated circuits; Gallium arsenide; III-V semiconductors; Integrated circuit technology; Integrated logic circuits; Large scale integration; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; integrated logic circuits; large scale integration; Application specific integrated circuits; Digital integrated circuits; Electron mobility; Fabrication; Gallium arsenide; Large scale integration; Logic circuits; Logic design; MESFET integrated circuits; Silicon;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1982.1051777

Filename

1051777