A survey of reliability-prediction procedures for microelectronic devices

Author

Bowles, John B.

Author_Institution

Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA

Volume

41

Issue

1

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

2

Lastpage

12

Abstract

The author reviews six current reliability prediction procedures for microelectronic devices. The device models are described and the parameters and parameter values used to calculate device failure rates are examined. The procedures are illustrated by using them to calculate the predicted failure rate for a 64 K DRAM; the resulting failure rates are compared under a variety of assumptions. The models used in the procedures are similar in form, but they give very different predicted failure rates under similar operating and environmental conditions, and they show different sensitivities to changes in conditions affecting the failure rates

Keywords

DRAM chips; circuit reliability; failure analysis; integrated circuit testing; 64 kbit; DRAM; device models; failure rates; microelectronic devices; reliability-prediction procedures; Integrated circuit modeling; Maintenance; Microelectronics; Predictive models; Random access memory; Reliability engineering; Semiconductor device reliability; Strategic planning; Stress; Telecommunications;

fLanguage

English

Journal_Title

Reliability, IEEE Transactions on

Publisher

ieee

ISSN

0018-9529

Type

jour

DOI

10.1109/24.126662

Filename

126662