Title :
CMOS RF power amplifier with reconfigurable transformer
Author :
Kim, Y. ; Park, C. ; Kim, H. ; Hong, S.
Author_Institution :
Sch. of Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
3/30/2006 12:00:00 AM
Abstract :
A CMOS RF power amplifier that can change the output transformer ratio is presented. The CMOS power amplifier is fully integrated in a 0.13 μm process and has a power added efficiency (PAE) of 38% at 2.1 GHz and an output power of 30.7 dBm with 3.0 V supply voltage. The PAE at an output power of 16 dBm was increased by 40% by altering the transformer ratio.
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; high-frequency transformers; 0.13 micron; 2.1 GHz; 3 V; CMOS RF power amplifier; output transformer ratio; power added efficiency; reconfigurable transformer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060237
